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| SEMIX754GB128D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 4 SPT IGBT Modules SEMIX754GB128D Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Target Data Features Typical Applications Inverse diode Thermal characteristics Temperature sensor Mechanical data GB 1 10-04-2006 GES (c) by SEMIKRON SEMIX754GB128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 10-04-2006 GES (c) by SEMIKRON SEMIX754GB128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 Typ. CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 10-04-2006 GES (c) by SEMIKRON SEMIX754GB128D Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 10-04-2006 GES (c) by SEMIKRON |
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